Imaging Fermi-level hysteresis in nanoscale bubbles of few-layer MoS2

Abstract The electrical stability and reliability of two-dimensional (2D) crystal-based devices are mainly determined by charge traps in the device defects. Although nanobubble structures as defect sources 2D materials strongly affect performance, local charge-trapping behaviors nanobubbles poorly understood. Here, we report a Fermi-level hysteresis imaging strategy using Kelvin probe force microscopy to study origins trapping MoS 2 on SiO . We observe that is larger than flat regions increases with height nanobubble, agreement our oxide trap band model. also perform transfer curve measurements , which exhibit enhanced current-hysteresis windows reliable programming/erasing operations. Our results provide fundamental knowledge mechanism nanobubbles, capability directly image can be powerful tool for development material-based memory devices.